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www.irf.com 1 10/15/09 irf7494pbf hexfet power mosfet high frequency dc-dc converters lead-free benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max i d 150v 44m ? @v gs = 10v 5.1a absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @ t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recover y dv/dt v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient (pcb mount) ??? 50 v a c c/w 33 -55 to + 150 0.02 2.5 max. 5.1 4.0 40 150 20
irf7494pbf 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown voltage 150 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.13 ??? v/c r ds(on) static drain-to-source on-resistance ??? 35 44 m ? v gs(th) gate threshold voltage 2.5 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 10 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units gfs forward transconductance 12 ??? ??? s q g total gate charge ??? 35 53 q gs gate-to-source charge ??? 6.4 ??? nc q gd gate-to-drain ("miller") charge ??? 13 ??? t d(on) turn-on delay time ??? 9 ??? t r rise time ???10??? t d(off) turn-off delay time ??? 29 ??? ns t f fall time ???14??? c iss input capacitance ??? 1783 ??? c oss output capacitance ??? 222 ??? c rss reverse transfer capacitance ??? 104 ??? pf c oss output capacitance ??? 886 ??? c oss output capacitance ??? 121 ??? c oss eff. effective output capacitance ??? 189 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 45 ??? ns q rr reverse recovery charge ??? 93 ??? nc a ??? ??? 2.3 ??? ??? 40 typ. ??? ??? conditions v ds = 50v, i d = 5.1a i d = 3.1a v ds = 75v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 262 3.1 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 3.1a, v gs = 0v t j = 25c, i f = 3.1a, v dd = 25v di/dt = 100a/ s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 3.1a v ds = v gs , i d = 250a v ds = 120v, v gs = 0v v ds = 120v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 120v, ? = 1.0mhz v gs = 0v, v ds = 0v to 120v v gs = 10v v dd = 75v i d = 3.1a r g = 6.8 ?
irf7494pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15.0v 10.0v 8.00v 5.50v 5.00v 4.75v 4.50v bottom 4.25v 60s p ulse width tj = 25c 4.25v 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.1a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.25v vgs top 15.0v 10.0v 8.00v 5.50v 5.00v 4.75v 4.50v bottom 4.25v 60s p ulse width tj = 150c
irf7494pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v vds= 30v i d = 3.1a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec
irf7494pbf www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
irf7494pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l q g q gs q gd v g charge 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 5.1a t j = 25c t j = 125c 0 5 10 15 20 25 30 35 40 45 i d , drain current (a) 30 35 40 45 50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.4a 2.5a bottom 3.1a
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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

irf7494pbf 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 55mh, r g = 25 ? , i as = 3.1a. when mounted on 1 inch square copper board, t 10 sec. pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 3.1a, di/dt 1907a/s, v dd v (br)dss , t j 150c. r is measured at t j of approximately 90c. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2009

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